Samsung Electronics announced today that it has started producing ultra-high-speed four gigabit low power double data rate 3 mobile DRAM using 20 nanometer class process technology.
The 20nm 4Gb LPDDR3 Mobile DRAM, which was developed for high-end smartphones and tablets, is said to perform at levels comparable to standard DRAM in PCs. According to Samsung, it’s capable of transmitting data at up to 2,133 megabits per second (Mbps) per pin, which is more than double the performance of older LPDDR2 DRAM, making it possible to transmit three full HD videos totaling 17GB in length in just one second. Compared to the 30nm-class LPDDR3 DRAM, the new 20nm-class LPDDR3 DRAM performs 30 percent better and consumes 20 percent less power. Samsung’s 4Gb LPDDR3 mobile DRAM will be made available to OEMs in a 0.8mm 2GB package. Mass production of the new chip is expected to begin later this year.